| 摘要 |
PROBLEM TO BE SOLVED: To increase the ON/OFF ratio and the field effect mobility in a thin-film transistor using a zinc oxide thin film in the channel layer. SOLUTION: The thin-film transistor using the zinc oxide thin film in the channel layer is characterized in that the spacing d(002) between the crystal planes (002) of the channel layer consisting of the zinc oxide thin film is in the range of 2.6130(Å)≤d(002)≤2.6180(Å). Further, it is characterized in that preferably the direction of drain current Isd (the direction of carrier movement) is substantially parallel to the crystal plane (002) of the channel layer. COPYRIGHT: (C)2005,JPO&NCIPI
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