| 摘要 |
PROBLEM TO BE SOLVED: To form a plating film having superior in-plane uniformity on a thinned seed layer, and besides, having superior properties of plugging a refined damascene structure. SOLUTION: This plating method comprises placing an electric resistor 534 between an electric conductor layer formed on at least one part of the surface of a substrate and an anode 536; introducing a plating liquid 550 containing 25 to 75 g/L copper ions and 0.4 mol/L or more organic or inorganic acid, into a space of the conductor layer side in between the electric conductor layer and the anode 536, and an anolyte 538 having the same composition as the plating liquid 550 or containing 0 to 75 g/L copper ions and 0.6 mol/L or less organic or inorganic acid to a space of the anode 536 side, to fill a space in between the electric conductor layer and the anode 536 with a plating liquid 550 and an anolyte 538; and applying voltage between the conductor layer and the anode 536 to plate the surface of the conductor layer. COPYRIGHT: (C)2005,JPO&NCIPI |
