发明名称 APPARATUS AND METHOD FOR ELECTRONIC BEAM PROXIMITY EXPOSURE, AND WAFER
摘要 PROBLEM TO BE SOLVED: To provide an apparatus and method for electron beam proximity exposure, where operable exposure conditions can be relaxed for improving the throughput. SOLUTION: By introducing trace small amount of gas into the casing of the column 10 and a chamber 8, the level of vacuum is lowered to suppress the variance of the diameters of electronic beams, due to space charge effect. Thus, the exposure conditions, such as an electron beam current quantity, are relaxed to improve the throughput in electron beam proximity exposure. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005150515(A) 申请公布日期 2005.06.09
申请号 JP20030387976 申请日期 2003.11.18
申请人 TOKYO SEIMITSU CO LTD;RIIPURU:KK 发明人 KAWAMURA YUKISATO;SHIMAZU NOBUO;SAMOTO NORIHIKO;KASAHARA HARUO
分类号 G03F7/20;H01J37/04;H01J37/18;H01J37/305;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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