发明名称 |
COMPLETE DEPLETION TYPE SOI MOSFET |
摘要 |
PROBLEM TO BE SOLVED: To provide a complete depletion type SOI MOSFET capable of suppressing short channel effect caused by permitting a drain electric field to pass through a BOX layer when the thickness of an SOI layer or the BOX layer is made to be an identical thickness to that of a conventional complete depletion type SOI MOSFET, and of suppressing kink effect. SOLUTION: The complete depletion type SOI MOSFET 11 or 12 is configured such that a p+ region 13A or a p+ region 13B and a p+ region 13C are formed into an L shape from between at least any one of an n+ source region 3 and an n+ drain region 4 and an embedded oxide film layer 2 to an adjacent region of at least any one of the n+ source region 3 and the n+ drain region 4 on the opposite side of the side of a p-channel region 5. COPYRIGHT: (C)2005,JPO&NCIPI
|
申请公布号 |
JP2005150402(A) |
申请公布日期 |
2005.06.09 |
申请号 |
JP20030385985 |
申请日期 |
2003.11.14 |
申请人 |
TOYO UNIV |
发明人 |
NAKAJIMA YOSHITADA;HANAJIRI TATSURO;TOYABE TATSU;MORIKAWA TAKITARO;SUGANO TAKUO |
分类号 |
H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|