发明名称 ELECTRODE FORMING METHOD, THIN FILM TRANSISTOR, THIN FILM TRANSISTOR CIRCUIT, ELECTRONIC DEVICE, AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an electrode forming method which can form an electrode capable of preventing degradation of the characteristics of an organic layer in contact therewith by a simple method, to provide a thin film transistor having excellent characteristics provided with the electrode formed by the electrode forming method, and to provide a thin film transistor circuit, an electronic device and an electronic apparatus provided with the thin film transistor. SOLUTION: In the electrode forming method, the electrode in contact with an organic layer mainly composed of organic materials is formed, and the electrode is formed by electroless plating by using plating solution containing metal salt of the metal to form the electrode and a reducing agent, and containing substantially no alkali metal ions. The preferred reducing agent mainly consists of at least one of hydrazine and hypophosphorous acid ammonium, and the preferred pH adjuster mainly consists of at least one kind of aqueous ammonium, trimethyl ammonium hydride, and ammonium sulfide. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005146400(A) 申请公布日期 2005.06.09
申请号 JP20030390000 申请日期 2003.11.19
申请人 SEIKO EPSON CORP 发明人 HARADA MITSUAKI;KAWASE TAKEO;KIMURA SATOSHI;FURUHATA HIDEMICHI
分类号 C23C18/16;C23C18/31;H01L21/28;H01L21/288;H01L21/336;H01L29/786;(IPC1-7):C23C18/16 主分类号 C23C18/16
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