发明名称 |
Clear field annular type phase shifting mask |
摘要 |
A mask comprises a mask substrate and at least one annular equal line space phase shifting pattern on said mask substrate to produce an opaque region on a semiconductor substrate. A method of manufacturing a mask comprises providing a mask substrate; forming a layer of resist material on said substrate; patterning at least one annular equal line space phase shifting pattern on said resist layer; patterning said pattern onto said mask substrate; removing a remaining portion of said resist layer. A method of transferring a pattern onto a semiconductor substrate comprises illuminating a mask comprising at least one annular equal line space phase shifting pattern on the mask to produce an opaque region on a semiconductor substrate.
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申请公布号 |
US2005123838(A1) |
申请公布日期 |
2005.06.09 |
申请号 |
US20030730533 |
申请日期 |
2003.12.08 |
申请人 |
CHANG CHUNG-HSING;LIN C. H.;CHEN CHUNG-KUANG |
发明人 |
CHANG CHUNG-HSING;LIN C. H.;CHEN CHUNG-KUANG |
分类号 |
G03F1/00;G03F1/08;G03F7/20;G03F9/00;H01L21/00;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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