发明名称 |
Access control unit and method for use with synchronous dynamic random access memory device |
摘要 |
An access control unit and method is proposed for use with an SDRAM (Synchronous Dynamic Random-Access Memory) device to control each round of burst-transfer type of access operation on the SDRAM device. The proposed access control unit and method is characterized by that the column-address strobe signal involved in each round of the burst-transfer access operation is continuously set at active state for a period of clock pulses equal in number to the specified burst length of the burst-transfer access operation, rather than just for a period of one pulse. This feature allows external circuitry to arbitrarily change the burst length, and also allows no use of burst-stop command or a precharge-interrupt method to stop each round of the burst-transfer access operation, allowing the access control logic circuit architecture to be more simplified than the prior art.
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申请公布号 |
US2005125596(A1) |
申请公布日期 |
2005.06.09 |
申请号 |
US20030729361 |
申请日期 |
2003.12.04 |
申请人 |
RDC SEMICONDUCTOR CO., LTD. |
发明人 |
YAP CHANG-CHENG |
分类号 |
G06F12/08;(IPC1-7):G06F12/08 |
主分类号 |
G06F12/08 |
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