| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a contact hole of a memory device which can reduce a production cost and improve a yield. <P>SOLUTION: The method for forming the contact hole is composed of a step that furnishes a substrate where a plurality of gate structures made up of a gate, a gate upper-covering layer, and a gate spacer are formed, a step that forms insulation layers among each gate structures, a step that etches the insulation layers using the gate upper-covering layer, the gate spacer, and the substrate as a stopping layer, and forms first contact holes, where the substrate and the gate spacers are exposed on its bottom, in the regions between the gate structures, and forms second contact holes, where the gate covering layer is exposed on its bottom, on each gate structures, a step that forms protective spacers on each side walls of the first contact holes and the second contact holes, a step that etches the gate upper-covering layer on the bottom of the gate contact holes using the protective spacers as a stopping layer to expose the gate , and a step that removes the protective spacers. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
