发明名称 |
THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, CIRCUIT THEREOF, ELECTRONIC DEVICE, AND ELECTRONIC EQUIPMENT |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor by which the thin film transistor having excellent characteristics can be manufactured by a simple method; and to provide a thin film transistor manufactured by the method and a thin film transistor circuit, an electronic device, and electronic equipment provided with the thin film transistor. <P>SOLUTION: The method of manufacturing the thin film transistor includes a first step of forming a source electrode 3 and a drain electrode 4 on a substrate 2 by electroless plating, a second step of forming an organic semiconductor layer 5 at least in the area between the source and drain electrodes 3 and 4 by the coating method, and a third step of forming a gate insulating layer 6 on the organic semiconductor layer 5 by the coating method. The method also includes a fourth step of forming a gate electrode 7 so that the electrode 7 may overlap the area between the source and drain electrodes 3 and 4 on the gate insulating layer 6 by the coating method. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2005150640(A) |
申请公布日期 |
2005.06.09 |
申请号 |
JP20030390001 |
申请日期 |
2003.11.19 |
申请人 |
SEIKO EPSON CORP |
发明人 |
KAWASE TAKEO;HARADA MITSUAKI;KIMURA SATOSHI;FURUHATA HIDEMICHI |
分类号 |
H01L21/28;C23C18/16;C23C18/18;C23C18/31;C25D3/00;G02F1/1368;G02F1/167;H01L21/20;H01L21/288;H01L21/336;H01L29/417;H01L29/423;H01L29/49;H01L29/786;H01L51/05;H01L51/40;(IPC1-7):H01L29/786;H01L51/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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