发明名称 AM INTERMEDIATE FREQUENCY VARIABLE GAIN AMPLIFIER CIRCUIT, VARIABLE GAIN AMPLIFIER CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a variable gain amplifier circuit which is used with a low power source voltage, generating little noise inside the circuit. SOLUTION: A MOS transistor 35 is connected between the sources of MOS transistors 33, 34 constituting a differential amplifier circuit. A DC bias voltage for operating the MOS transistor 35 in a nonsaturation area is applied onto the gate of the MOS transistor 35. When the output voltage of the variable gain amplifier circuit 30 is increased, a control voltage to reduce resistance between the source and drain of the MOS transistor 35 is given, so as to reduce the gain of an AM intermediate frequency variable gain amplifier circuit 30. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005151460(A) 申请公布日期 2005.06.09
申请号 JP20030389693 申请日期 2003.11.19
申请人 TOYOTA INDUSTRIES CORP;NIIGATA SEIMITSU KK 发明人 KATSUNAGA HIROSHI;MIYAGI HIROSHI
分类号 H03G3/10;H03G1/00;(IPC1-7):H03G3/10 主分类号 H03G3/10
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