| 摘要 |
PROBLEM TO BE SOLVED: To detect the faulty formation of a trench, such as the disconnection of the trench, too shallow depth of the trench or the like, in a static characteristic test effected in the stage of a wafer upon manufacturing a trench insulating gate type semiconductor device. SOLUTION: A p-type base layer 10 is formed on an n-type semiconductor substrate 1, and trenches 20 are formed from the surface of the p-type base layer 10 to the n-type semiconductor substrate 1. Then, n-type source regions 5 are selectively formed on the surface layer of a plurality of p-type base regions 4 by dividing the p-type base layer 10 by the trenches 20 to form a gate electrode 3 on the inside of the trench 20 through a gate insulating film 2. Electrodes for testing 31, 32 are connected electrically to the p-type base regions 4 in every p-type base regions 4 and insulated from neighbored p-type base regions 4 in the p-type base regions 4 while pinching the trenches 20, and are formed under a state that they are insulated mutually. Voltage and current characteristics between the electrodes 31, 32 are checked whether the characteristics show bidirectional Zener characteristics or not. COPYRIGHT: (C)2005,JPO&NCIPI
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