SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve both off-state and on-state breakdown voltages of a horizontal field effect transistor. SOLUTION: The semiconductor device has such a structure that the source region of a second conductivity type, the body region of a first conductivity type, the drain offset region of the second conductivity type, and the drain region of the second conductivity type are formed in order in the surface of a semiconductor substrate. The surface of the body region is coated with a gate insulation film, and a gate electrode is formed on the surface of the gate insulation film. The dopant concentration of the drain offset region is higher on the drain region side than on the body region side. COPYRIGHT: (C)2005,JPO&NCIPI