Boron phosphide-based semiconductor device production method thereof light-emitting diode and boron phosphide-based semiconductor layer

摘要

A boron phosphide-based semiconductor device enhanced in properties includes a substrate ( 11 ) composed of a {111}-Si single crystal having a surface {111} crystal plane and a boron phosphide-based semiconductor layer formed on the surface of the substrate and composed of a polycrystal layer ( 12 ) that is an aggregate of a plurality of a triangular pyramidal single crystal entities ( 13 ) of the boron phosphide-based semiconductor crystal, where in each single crystal entity has a twining interface that forms an angle of 60° relative to a <110> crystal direction of the substrate.