| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride light-emitting device in which transparent conductivity oxide, having a work function value larger than that of indium tin oxide is made to be a transparent electrode of the nitride light-emitting device, and to provide its manufacturing method. <P>SOLUTION: In the nitride light-emitting device and its manufacturing method, a substrate 110, an n-type cladding layer 130, an active layer 140, a p-type cladding layer 150, and ohmmic contact layer are laminated, in this order, and the ohmmic contact layer is formed, by an independent transparent conductivity oxide thin film layer having the work function value larger than that of the indium tin oxide or a thin-film layer in which a metal is added as a dopant. This not only shows superior current-voltage characteristics, because ohmmic contact characteristic with respect to the p-type cladding layer is improved, but also improves the emission efficiency of the device by high optical transparency possessed by the transparent electrode. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
