| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which restrains a parasitic element from generating, is improved in input impedance accuracy, and is equipped with a switching element and a circuit for controlling the switching element. <P>SOLUTION: The semiconductor device is equipped with a control input terminal 1, a GND terminal 2, an output terminal 3, an IGBT 6, and a control circuit 4 which drives the IGBT 6. A grounding resistor 7 and a temperature compensating resistor 8 are connected in series between the control input terminal 1 and the GND terminal 2. A polysilicon resistor is formed on an insulating film provided on a semiconductor substrate where the IGBT 6 is provided, and is used as the grounding resistor 7. A diffusion resistor is obtained by subjecting the semiconductor substrate where impurities are doped into a diffusion treatment, and is used as the temperature compensating resistor 8. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
