| 摘要 |
PROBLEM TO BE SOLVED: To provide a fin field-effect transistor with a new structure and to provide its manufacturing method. SOLUTION: The fin field-effect transistor indicated here comprises a first and a second gates. The first gate is constituted by perpendicular portion, which is limited to side surface of a silicon fin and side surface of capping pattern formed on the upper portion, and horizontal portion, which is continuously extended in horizontal direction at the above-mentioned perpendicular portion, and the above-mentioned second gate directly makes contact with the capping pattern and the horizontal portion of the first gate. The first gate can easily adjust channels, and the second gate can improve device working speed. COPYRIGHT: (C)2005,JPO&NCIPI
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