发明名称 Wiring substrate, semiconductor device, and method for manufacturing thereof
摘要 It is an object of the present invention to provide a technique for forming a thin wiring in forming a pattern such as wiring by discharging a droplet. In the present invention, a porous (including microporous) substance is formed as a base film in forming pattern by using a droplet discharge method (also referred to as an ink-jetting method). One feature of a wiring substrate according to the present invention provides a porous film and a conductive layer thereon. One feature of a semiconductor device of the present invention provides a thin film transistor in which a gate electrode is formed by the conductive layer having the above-described structure.
申请公布号 US2005121675(A1) 申请公布日期 2005.06.09
申请号 US20040973986 申请日期 2004.10.27
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MAEKAWA SHINJI;ARAI YASUYUKI
分类号 G02F1/1362;H01L21/77;H01L21/84;H01L27/12;H05K3/12;H05K3/38;(IPC1-7):H01L29/04 主分类号 G02F1/1362
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