发明名称 |
Wiring substrate, semiconductor device, and method for manufacturing thereof |
摘要 |
It is an object of the present invention to provide a technique for forming a thin wiring in forming a pattern such as wiring by discharging a droplet. In the present invention, a porous (including microporous) substance is formed as a base film in forming pattern by using a droplet discharge method (also referred to as an ink-jetting method). One feature of a wiring substrate according to the present invention provides a porous film and a conductive layer thereon. One feature of a semiconductor device of the present invention provides a thin film transistor in which a gate electrode is formed by the conductive layer having the above-described structure.
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申请公布号 |
US2005121675(A1) |
申请公布日期 |
2005.06.09 |
申请号 |
US20040973986 |
申请日期 |
2004.10.27 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MAEKAWA SHINJI;ARAI YASUYUKI |
分类号 |
G02F1/1362;H01L21/77;H01L21/84;H01L27/12;H05K3/12;H05K3/38;(IPC1-7):H01L29/04 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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