摘要 |
There are disclosed an information storage apparatus and an electronic device mounting the information storage apparatus, wherein when the electronic device mounting an information storage element utilizing a magnetized direction control of a ferromagnetic material, for example a MRAM, receives something strong magnetic field, an erroneous storing of the information is prevented by preventing an influence of the magnetic field to a storage layer. In an information storage apparatus ( 1 ) equipped with an information storage element ( 12 ) for storing information by utilizing a magneto-resistive effect, a resin material ( 13 ) used when the information storage element ( 12 ) is mounted is the one being mixed up a high-permeability material, or the information storage element ( 12 ) is the one formed with a high-permeability material film or a thin film including a high-permeability material on a part or an entire front surface thereof.
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