METHOD FOR FORMING INSULATING FILM, SYSTEM FOR FORMING INSULATING FILM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

In a CVD apparatus (111), modification of a porous low dielectric constant film containing silicon is performed by heating a semiconductor wafer (W) by a heater, supplying 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) thereto and conducting a heat treatment without applying a high-frequency voltage. Then, in the same CVD apparatus (111), an insulating film with high density and high hardness is formed on the porous low dielectric constant film by heating the semiconductor wafer (W), introducing TMCTS and applying a high-frequency voltage thereto, thereby generating a plasma of a gas containing TMCTS.