| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress the migration of silicon germanium films in depositing the silicon germanium film with a high activation rate of dopant. <P>SOLUTION: In the case of depositing a capping layer comprising polysilicon, for example, by raising temperature to a second temperature after depositing a silicon germanium film at a first temperature, a silane-based gas is supplied into a reaction vessel in order to suppress the movement of the silicon germanium film in a process of raising the temperature of a treating atmosphere toward the second temperature from the first temperature, and the surface of the silicon germanium film is covered with a coating layer comprising silicon. Moreover, in the case of performing a process of carrying out a wafer by evacuating the inside of the reaction vessel after depositing the silicon germanium film, the silicon germanium film is annealed by hydrogen gas while lowering the temperature inside the reaction vessel from the deposition temperature, so as to suppress the migration at the time of evacuation. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
