SEMICONDUCTOR DEVICE STRUCTURE HAVING ETCH RESISTANT LINER ON TRANSISTOR GATE STRUCTURE AND ITS FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device structure for achieving a high device performance and to provide a method of forming the semiconductor device structure. SOLUTION: There is provided an etch resistant liner which covers a side wall of a transistor gate stack and resides along a part of a substrate at a lower part of the transistor gate stack. The liner prevents a silicide formation of the side wall of the gate stack which generates an electric shortage, and determines a location of the silicide formation within source and drain regions inside the substrate at the lower part of the transistor gate stack. The liner also covers a resistor gate stack and prevents the silicide formation in or adjacent to the resistor gate stack. COPYRIGHT: (C)2005,JPO&NCIPI