| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating a resistor in a semiconductor element capable of improving a mix-signal and an RF characteristic by forming the resistor so as to uniform a dopant concentration in polysilicon. SOLUTION: The method of fabricating a resistor formed of polysilicon includes: a step of forming a polysilicon film in a fine grain structure by vapor deposition of polysilicon on the top of a semiconductor substrate at the temperature of 700°C or higher; a step of performing a purge process after vapor deposition of the polysilicon is effected to a first height at the temperature of 600°C; and a step of performing a purge process after vapor deposition of the polysilicon is effected to a second height to form a fine grain polysilicon film in which different species of nucleuses are created. After thus produced fine grain polysilicon film is doped with dopant and the doped fine grain polysilicon film is subject to heat-treatment, the polysilicon is patterned and a resistor pattern is formed. Thus, the fine grain in the polysilicon film causes the resistor of the present invention to have a reduced dopant concentration gradient, which results in a uniform resistance distribution. COPYRIGHT: (C)2005,JPO&NCIPI
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