| 摘要 |
PROBLEM TO BE SOLVED: To make uniform the concentration of a gas for exciting a plasma which is fed to a plasma generating region, while preventing the gas for exciting the plasma from being brought into a plasma before it is fed to the plasma generating region. SOLUTION: A mounting pedestal 3 is provided in the bottom portion of a processing container 2 of an apparatus 1 for forming a film by a plasma, and a radial line slot antenna 12 is provided in the upper portion of the apparatus 1. A lattice-form raw-material-gas feeding structure 30 is so provided between the mounting pedestal 3 and the radial line slot antenna 12 as to form a plasma generating region R1 on the upper side of the structure 30. A first gas feeding port 40 for exciting the plasma is provided in the inner peripheral surface of the processing container 2, and a gas feeding structure 50 for exciting the plasma which has a second gas feeding port 53 for exciting the plasma is provided on the top surface of the raw-material-gas feeding structure 30. Gases for exciting the plasma are so fed to the plasma generating region R1 from the lateral and lower gas feeding ports 40, 53 by adjusting the flow rates of the gases fed from the respective gas feeding ports 40, 53 for exciting the plasma as to make uniform the concentration of the gas for exciting the plasma which is generated in the plasma generating region R1. COPYRIGHT: (C)2005,JPO&NCIPI
|
