| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method of manufacturing a semiconductor device in which a transistor having the small unevenness of performance can be manufactured by forming stably a gate electrode film made of a polycrystalline silicon film on a gate insulating film made of a high dielectric film, and suppressing the unevenness of electrical performance such as withstand voltage, etc. of the gate insulating film. SOLUTION: The method of manufacturing the semiconductor device includes a step of forming a high dielectric film on a semiconductor substrate, a step of processing to oxidize the front surface of the high dielectric film, a step of forming the polycrystalline silicon film on the high dielectric film after this oxidizing, a step of forming a gate electrode by patterning the polycrystalline silicon film, and a step of forming a gate insulating film by patterning the high dielectric film. COPYRIGHT: (C)2005,JPO&NCIPI
|
