发明名称 |
LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a light-emitting device improved in internal quantum efficiency, consuming less power, having high luminance and high reliability. SOLUTION: This method for manufacturing a light-emitting device comprises the steps of: forming a conductive translucent oxide layer containing a conductive translucent oxide material and silicon oxide; forming a barrier layer in which density of the silicon oxide is higher than that in the conductive translucent oxide layer over the conductive translucent oxide layer; forming a positive electrode having the conductive translucent oxide layer and the barrier layer; heating the positive electrode under a vacuum environment; forming an electroluminescent layer over the heated positive electrode; and forming a negative electrode over the electroluminescent layer. The device is characterized in that the barrier layer is formed between the electroluminescent layer and the conductive translucent oxide layer. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005150097(A) |
申请公布日期 |
2005.06.09 |
申请号 |
JP20040299587 |
申请日期 |
2004.10.14 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;AKIMOTO KENGO;SAKATA JUNICHIRO;HIRAKATA YOSHIHARU;SONE HIROTO |
分类号 |
H01L51/50;H05B33/10;H05B33/14;H05B33/22;H05B33/28;(IPC1-7):H05B33/22 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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