发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent the separation of a bump and reduce damage to a metallic layer for substrate. <P>SOLUTION: A first metallic layer 4 for substrate constituted of TiW, a second metallic layer 5 for substrate constituted of Au, and a bump electrode 6 consisting of Au, are arranged on a pad member 1. The concentration of Ti in TiW is increased by employing TiW for the first metallic layer 4 for substrate so as to be not less than 40% and not more than 90% in a weight ratio. Much of compound between a noble metal and a metal, such as AuTi or the like, is produced between Ti in the TiW and a second metallic layer 5 for substrate which is formed of a noble metal layer such as Au or the like. The value of corrosion current is decreased by the increase of the amount of compound between metals whereby the suppression of corrosion reaction as the whole of a barrier metal becomes possible. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005150440(A) 申请公布日期 2005.06.09
申请号 JP20030386532 申请日期 2003.11.17
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TETANI MICHINARI;FUNAKOSHI HISASHI
分类号 H01L23/52;H01L21/3205;H01L21/60;(IPC1-7):H01L21/320 主分类号 H01L23/52
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