发明名称 |
SEMICONDUCTOR STORAGE DEVICE, ITS MANUFACTURING METHOD AND OPERATING METHOD, AND PORTABLE ELECTRONIC APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To realize the scale-down and increased capacity of a memory in a semiconductor storage device, which consists of an element having a function, which converts a change in the charged quantity into a current quantity. SOLUTION: A semiconductor storage device and a portable electronic apparatus having the semiconductor storage device comprises: a first conductivity type region formed in a semiconductor layer; a second conductivity type region formed in the semiconductor layer in contact with the first conductivity type region; a memory functional element disposed on the semiconductor layer across the boundary of the first and second conductivity type regions; and an electrode provided in contact with the memory functional element and on the first conductivity type region via an insulating film. Scale-down and high-integration are implemented by constituting the memory cell of substantially one device. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005150765(A) |
申请公布日期 |
2005.06.09 |
申请号 |
JP20040376655 |
申请日期 |
2004.12.27 |
申请人 |
SHARP CORP |
发明人 |
IWATA HIROSHI;SHIBATA AKIHIDE |
分类号 |
G11C16/04;G11C16/02;H01L21/8246;H01L21/8247;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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