发明名称 SEMICONDUCTOR STORAGE DEVICE, ITS MANUFACTURING METHOD AND OPERATING METHOD, AND PORTABLE ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To realize the scale-down and increased capacity of a memory in a semiconductor storage device, which consists of an element having a function, which converts a change in the charged quantity into a current quantity. SOLUTION: A semiconductor storage device and a portable electronic apparatus having the semiconductor storage device comprises: a first conductivity type region formed in a semiconductor layer; a second conductivity type region formed in the semiconductor layer in contact with the first conductivity type region; a memory functional element disposed on the semiconductor layer across the boundary of the first and second conductivity type regions; and an electrode provided in contact with the memory functional element and on the first conductivity type region via an insulating film. Scale-down and high-integration are implemented by constituting the memory cell of substantially one device. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005150765(A) 申请公布日期 2005.06.09
申请号 JP20040376655 申请日期 2004.12.27
申请人 SHARP CORP 发明人 IWATA HIROSHI;SHIBATA AKIHIDE
分类号 G11C16/04;G11C16/02;H01L21/8246;H01L21/8247;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 主分类号 G11C16/04
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