| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal layer composition determination method which enables a precise determination of a composition of a ternary compound semiconductor crystal layer which is epitaxial-grown on a substrate. SOLUTION: In the crystal layer composition determination method of searching for a composition x of a specimen in which the crystal layer of the ternary compound semiconductor Hg<SB>1-x</SB>Cd<SB>x</SB>T<SB>e</SB>crystal is epitaxial-grown on the substrate, when the composition of the crystal layer in which the surface is etched with an etchant of mixture solution of bromine and methanol, and the composition of the crystal layer in which the surface is polished are expressed by xe and xp, respectively, from one of them, the other is computed by transformation xe=xp-0.00063. COPYRIGHT: (C)2005,JPO&NCIPI
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