| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin-on glass composite and a method of forming a silicon oxide film using the same. SOLUTION: According to the spin-on glass composite which has the excellent property of flattening a bump and has no void, and a method of forming the silicon oxide film using the same, the spin-on glass composite containing polysilazane whose structural formula is -(SiH<SB>2</SB>NH)<SB>n</SB>-(where n represents a positive integer) and weight-average molecular weight is 3,300 to 3,700 is applied on a semiconductor substrate having a bump formed on its top surface, so that a flat spin-on glass film is formed. The spin-on glass film is cured to be transformed into a flat silicon oxide film. COPYRIGHT: (C)2005,JPO&NCIPI
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