| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem in which since a BTBAS-SiN film is brittler than a conventional LP-SiN film, a BTBAS-SiN on a reverse surface possibly cracks by a wafer (semiconductor substrate) fixing method such as an electrostatic chuck and a vacuum chuck up to a ground oxide film and a peel piece of the SiN film falls on a wafer right below it in a cassette owing to the crack to be a particle. SOLUTION: In a method for manufacturing a semiconductor device, the brittle BGTBAS-SiN film 11 is removed before a stage wherein the semiconductor substrate 1 is fixed or conveyed by the electrostatic chuck, vacuum chuck, etc. Or the BTBAS-SiN film 11 and back seal oxide film 10 are removed before the stage wherein the semiconductor substrate 1 is fixed or conveyed, to expose the reverse surface of the semiconductor substrate 11. Alternatively, a protection film is deposited between the back seal oxide film 10 and BTBAS-SiN film 11 and then the BTBAS-SiN film is removed. COPYRIGHT: (C)2005,JPO&NCIPI
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