发明名称 |
STI forming method for improving STI step uniformity |
摘要 |
Disclosed is a shallow trench isolation (STI) forming method for improving STI step uniformity. The method deposits an oxidation layer to a semiconductor structure formed with STIs. After a planarization material layer is formed on the oxidation, then CMP process is performed. By using the method of the present invention, the STI step uniformity can be raised.
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申请公布号 |
US2005124134(A1) |
申请公布日期 |
2005.06.09 |
申请号 |
US20030728983 |
申请日期 |
2003.12.08 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
HAO CHUNG-PENG;CHEN YI-NAN |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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