| 摘要 |
A nonvolatile ferroelectric memory device features a wide page buffering function. The nonvolatile ferroelectric memory device comprises a single cell array block, a word line driving unit, a plate line driving unit, a wide page buffer unit and a column selecting unit. All cell arrays in the memory device are included in a single cell array block. In a read mode, the wide page buffer unit simultaneously senses and buffers voltages of all main bit lines in the single cell array block and outputs the buffered data to a data buffer unit by a predetermined data width unit. In a write mode, the wide page buffer unit receives write data in a predetermined data width, buffers the write data until the write data corresponding to the all main bit lines are applied, and simultaneously writes the buffered data in the cells. As a result, the cell efficiency is increased, and the data processing speed is improved.
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