发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ELECTRONIC EQUIPMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which anisotropic conductive paste is provided on terminals with a desired applied thickness at the time of providing the paste on the terminals and a semiconductor chip, and a circuit board is joined satisfactorily to each other. <P>SOLUTION: The method of manufacturing semiconductor device includes steps of: forming steps 5 by providing insulating layers 3 having heights higher than those of electrode pads 2 provided on a substrate 1 around the pads 2; of providing the anisotropic conductive paste 7 which is a paste material containing dispersed conductive particles in the steps 5, and electrically connecting the electrode pads 2 and the electrode terminals 9 of the semiconductor chip 8 to each other through the conductive particles provided in the steps 5. The heights of the steps 5 are set so that the parts 5 may hold the conductive particles. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005150587(A) 申请公布日期 2005.06.09
申请号 JP20030388998 申请日期 2003.11.19
申请人 SEIKO EPSON CORP 发明人 KORI TOSHIAKI
分类号 H01L23/52;H01L21/3205;H01L21/60;(IPC1-7):H01L21/60;H01L21/320 主分类号 H01L23/52
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