| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device and a semiconductor manufacturing device with which the rise of costs is suppressed, a film can be thinned in a barrier metal layer, and sufficient barrier property can be obtained. SOLUTION: The method comprises a process for forming the barrier metal layer 5 in a prescribed position on a Cu wiring layer 3 formed on a semiconductor substrate by a CVD method or an ALD method, and a process for forming an Al layer 6 on the barrier metal layer without air-exposing the barrier metal layer 5. COPYRIGHT: (C)2005,JPO&NCIPI |
