发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To reduce the size of a device and to improve reliability by realizing preventing of positional deviation without introducing the complication of a manufacturing process. SOLUTION: A method of manufacturing the semiconductor device includes a first step of connecting the emitter 102 of an IGBT element 1 to the emitter circuit 202 of the substrate 2 simultaneously upon connecting of the gate 101 of the IGBT element 1 to the gate circuit 201 of the substrate 2, and a second step of connecting the collector 103 of the IGBT element 1 to the collector circuit of the substrate after the first step. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005150596(A) 申请公布日期 2005.06.09
申请号 JP20030389260 申请日期 2003.11.19
申请人 NISSAN MOTOR CO LTD 发明人 YAMAGIWA MASANORI
分类号 H01L25/07;H01L21/60;H01L25/18;(IPC1-7):H01L25/07 主分类号 H01L25/07
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