发明名称 Semiconductor constructions
摘要 The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.
申请公布号 US2005121794(A1) 申请公布日期 2005.06.09
申请号 US20040026822 申请日期 2004.12.29
申请人 JUENGLING WERNER;PRALL KIRK D.;IYER RAVI;SANDHU GURTEJ S.;BLALOCK GUY 发明人 JUENGLING WERNER;PRALL KIRK D.;IYER RAVI;SANDHU GURTEJ S.;BLALOCK GUY
分类号 H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L29/40 主分类号 H01L21/316
代理机构 代理人
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