发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ELECTRONIC EQUIPMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which anisotropic conductive paste is provided on terminals with a desired applied thickness in providing the paste on the terminals, and a semiconductor chip and a circuit board are joined satisfactorily to each other. <P>SOLUTION: The method of manufacturing semiconductor device includes steps of: arranging a mask 10 having openings 11 opened correspondingly to terminals 2 provided on a substrate 1 on the substrate 1; and providing the anisotropic conductive paste 7 containing dispersed conductive particles 7A on the terminals 2 through the openings 11. The distance H between the top surfaces of the terminals 2 and the top surface of the mask 10 is made smaller than the thickness D of the mask 10, and the heights of the terminals 2 are set so that the conductive particles 7A may be held in spaces formed by the openings 11 and terminals 2. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005150588(A) 申请公布日期 2005.06.09
申请号 JP20030388999 申请日期 2003.11.19
申请人 SEIKO EPSON CORP 发明人 KORI TOSHIAKI
分类号 H01L23/52;H01L21/3205;H01L21/60 主分类号 H01L23/52
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