| 摘要 |
PROBLEM TO BE SOLVED: To provide a lateral crystallization process for increasing lateral growth length (LGL). SOLUTION: While localization region of a substrate is heated for short time, and localization region of the substrate is heated, one portion of silicon film, which touches heated substrate region by heat contact, is crystallized by irradiating the silicon film located on the substrate to anneal the silicon film. The lateral crystallization process in which film is irradiated and crystallized by heating the substrate using CO<SB>2</SB>laser as heat source, and another side using ultraviolet ray laser or visible spectrum laser. COPYRIGHT: (C)2005,JPO&NCIPI |
