SEMICONDUCTOR LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To provide the structure of a high-yield and high-productivity self-oscillation type laser and high output laser by suppressing an improvement phenomenon. SOLUTION: The self-oscillation type red semiconductor laser includes the clad layer (102) of a first conductivity type, an active layer (103), and the clad layers (104 and 106) of a second conductivity type, and a saturable absorption layer (105) on the GaAs substrate (101) of the first conductivity type. The GaAs substrate (101) has a carrier concentration of 1×1018cm-3or less and has an oscillation frequency of not less than 630 nm nor more than 690 nm. COPYRIGHT: (C)2005,JPO&NCIPI