发明名称 ERROR FAILSAFE PROCESSING METHOD OF SEMICONDUCTOR STORAGE ELEMENT
摘要 PROBLEM TO BE SOLVED: To enable the normal read and write of data to continue as long as possible without causing the stop of an apparatus even when a cell failure of a data memory occurs. SOLUTION: When a failure occurs to a part of a storage area in a second memory 5A which is installed in a speed change gear electronic control unit 5 for a vehicle and in which the write and read of data are performed by indirect addressing, it is decided whether or not there is an unused storage area. When it is decided that there is the unused storage area, an address of the storage area where the failure instructed by a pointer at the indirect addressing occurs is overwritten by the address of the unused storage area. Thus, even if a memory error occurs, the normal operation of the speed change gear electronic control unit 5 can be secured without exchanging components immediately. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005149183(A) 申请公布日期 2005.06.09
申请号 JP20030386434 申请日期 2003.11.17
申请人 BOSCH AUTOMOTIVE SYSTEMS CORP 发明人 HARADA RYOICHI;SUZUKI EIJI;ARAI KENJI;SEKIGUCHI REI
分类号 G06F12/16;(IPC1-7):G06F12/16 主分类号 G06F12/16
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