发明名称 Method for manufacturing semiconductor device
摘要 A manufacturing method for a semiconductor device which is capable of manufacturing the semiconductor device with a high quality in high yields while reducing variations in electric characteristic is disclosed. The manufacturing method according to the present invention includes a main body wafer manufacturing process for manufacturing a wafer on which a semiconductor device to be completed as a product is formed and a monitor wafer manufacturing process for manufacturing a wafer on which a monitor element is formed, the processes sharing a monitoring step alone, the main body wafer manufacturing process including a variation reduction step, the monitor wafer manufacturing process including a quality check step and a condition setting step.
申请公布号 US2005124082(A1) 申请公布日期 2005.06.09
申请号 US20040936736 申请日期 2004.09.08
申请人 ISHII KAZUTOSHI;OSANAI JUN;KITAJIMA YUICHIRO;MINAMI YUKIMASA;UEMURA KEISUKE;WAKE MIWA 发明人 ISHII KAZUTOSHI;OSANAI JUN;KITAJIMA YUICHIRO;MINAMI YUKIMASA;UEMURA KEISUKE;WAKE MIWA
分类号 H01L21/66;G01R31/26;H01L21/00;H01L21/02;H01L21/336;H01L21/8238;H01L27/092;H01L29/78;(IPC1-7):H01L21/66 主分类号 H01L21/66
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