发明名称 Electropolishing apparatus, electropolishing method, and method of manufacturing semiconductor device
摘要 The formation of a groove wiring or a via contact which causes no retreat of a metal section by overpolishing by removing a section carrying little current which locally rises in a wafer face with the progress of electropolishing. In an electropolishing apparatus comprising a counter electrode ( 11 ) at a position facing a workpiece substrate ( 51 ), the counter electrode ( 11 ) consists of concentrically disposed electrodes ( 11 a- 11 e). Each of the electrodes ( 11 a- 11 e) has a power supply source ( 13 ) controlled independently and comprises a detector (unillustrated) for detecting a change in the current and voltage between each of the electrodes ( 11 a- 11 e) and the workpiece substrate ( 51 ) and a controller ( 15 ) for controlling a power supply to the electrodes ( 11 a- 11 e) on the basis of a change in the current and voltage detected by this detector.
申请公布号 US2005121335(A1) 申请公布日期 2005.06.09
申请号 US20040508510 申请日期 2004.09.21
申请人 SONY CORPORATION 发明人 NOGAMI TAKESHI;KOMAI NAOKI
分类号 C25F7/00;H01L21/3063;H01L21/321;H01L21/768;(IPC1-7):B23H5/00 主分类号 C25F7/00
代理机构 代理人
主权项
地址