METHOD FOR REDUCING REFLECTION ON SEMICONDUCTOR SURFACES

摘要

The invention relates to a method for reducing reflection on semiconductor surfaces, according to which one or several areas of the semiconductor surface are machined with beamed laser radiation in such a way that reflection-reducing cavities (5) having a specific aspect ratio are created on the semiconductor surface, whereupon said one or several areas are subjected to an etching process. The inventive method is characterized in that the one or several areas are subjected to a directed, dry-chemical etching process by means of which the aspect ratio of the cavities (5) is at least obtained. Said method allows the reflection on semiconductor surfaces, especially on surfaces of solar cells, to be reduced in an inexpensive manner.