On-p-GaAs substrate Zn1-xMgxSySe1-y pin photodiode and on-p-GaAs substrate Zn1-xMgxSySe1-y avalanche photodiode

摘要

A blue-ultraviolet on-p-GaAs substrate pin Zn_1-xMg_xS_ySe_1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)^m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn_1-xMg_xS_ySe_1-y layer, an i-Zn_1-xMg_xS_ySe_1-y layer, an n-Zn_1-xMg_xS_ySe_1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained. A blue-ultraviolet on-p-GaAs substrate avalanche Zn_1-xMg_xS_ySe_1-y photodiode with high sensitivity, high quantum efficiency, a wide sensitivity range, high reliability and a long lifetime. The ZnMgSSe avalanche photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)^m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn_1-xMg_xS_ySe_1-y layer, a lower doped n^--Zn_1-xMg_xS_ySe_1-y layer, a higher doped n⁺-Zn_1-xMg_xS_ySe_1-y layer, an n-electrode and an optionally provided antireflection film. Since the incidence light is not absorbed by ZnTe layers, a high avalanche gain, high quantum efficiency and high sensitivity are obtained.