发明名称 Hybrid molecular memory devices and methods of use thereof
摘要 The present invention provides hybrid microelectronic memory device, comprising: (a) a substrate having a surface, a first region of first work function adjacent the surface, and a second region of second work function adjacent the surface and adjacent the first region; (b) a film comprising redox-active molecules on the first and second regions; and (c) an electrode connected to the film. The present invention further provides a hybrid microelectronic memory device, comprising: (a) a substrate having surface and a structure or region such as a diode for increasing the retention time of the device formed adjacent the surface; (b) a film comprising redox-active molecules on or associated with the region or structure; and (c) an electrode connected to the redox active molecules opposite the substrate surface. Methods of using such devices are also described.
申请公布号 US2005121660(A1) 申请公布日期 2005.06.09
申请号 US20030729144 申请日期 2003.12.05
申请人 MISRA VEENA;GOWDA SRIVARDHAN;MATHUR GURU 发明人 MISRA VEENA;GOWDA SRIVARDHAN;MATHUR GURU
分类号 G11C13/02;H01L51/00;H01L51/30;(IPC1-7):H01L29/06 主分类号 G11C13/02
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