摘要 |
A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof. |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
TILAK, VINAYAK;TUCKER, JESSE;SANDVIK, PETER MICAH;WOODMANSEE, MARK ALLEN;MANIVANNAN, VENKATESAN;LEMMON, JOHN PATRICK;SHADDOCK, DAVID MULFORD;MALE, JONATHAN LLOYD;HAITKO, DEBORAH ANN;WEAVER, STANTON EARL |