| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a coating film for a semiconductor light emitting element for suppressing deterioration due to light from the semiconductor light emitting element and a phosphor, and to provide a semiconductor light emitting device provided with the coating film having excellent light stability and a manufacturing method thereof. <P>SOLUTION: Silica sol mixed with a wavelength conversion member 90 is coated to the upper face of the semiconductor light emitting element 10, silica sol is heated at 60 to 80°C to be subjected to tentative curing by gelling and thereafter vacuum ultraviolet ray whose wavelength is around 172 nm is emitted to the silica gel subjected to tentative curing by gelling, and the silica gel is heated to 100 to 150°C under an environment including oxygen to be subjected to main curing. Thus, the semiconductor light emitting element device 100 is provided wherein a silica coating film 80 with siloxane bond having nearly complete SiO<SB>2</SB>skelton is formed to the upper face of the semiconductor light emitting element 10. The coating film 80 provides the silica coating film for the semiconductor light emitting element having the siloxane bond wherein infrared ray absorption spectrum has a peak at 1,120 to 1,040 cm<SP>-1</SP>by the infrared ray spectral method. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
