| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an epitaxial substrate which restrains effectively the occurrence of recess defect. SOLUTION: When epitaxial growth of an InGaAs layer 4 is performed on an InP substrate 2 without any deviation from field direction (100), an InP substrate with a field direction precision of at moat ±0.05° is acted as the InP substrate 2, a growth temperature is made into 630-700°C, a growth rate is made into 0.6-2 μm/h, and a V/III ratio is made 10-100, thereby performing growth. As a result, the compound semiconductor epitaxial substrate in which recess type defect is little and surface state is also superior can be made manufactured. Further, trimethyl gallium is used as a gallium material used for the growth of the InGaAs layer 4, and trimethyl indium is used as an indium material, thereby improving the uniformity of an in-plane distribution of an In composition. COPYRIGHT: (C)2005,JPO&NCIPI
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