发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
Provided is a semiconductor device including a semiconductor substrate which includes a first semiconductor layer of a first conductivity and a pair of second semiconductor layers disposed on the first semiconductor layer and spaced apart from each other to form a trench therebetween, wherein the second semiconductor layer includes a first impurity-diffused region of the first conductivity extending from a lower surface toward an upper surface of the second semiconductor layer, and a second impurity-diffused region of a second conductivity which extends from the lower surface toward the upper surface and is adjacent to the first impurity-diffused region, an insulating layer covering a sidewall of the trench, and a cap layer which is in contact with the semiconductor substrate and covers an opening of the trench to form an enclosed space in the trench, a material of the cap layer being almost the same as that of the semiconductor substrate.
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申请公布号 |
US2005121704(A1) |
申请公布日期 |
2005.06.09 |
申请号 |
US20040983658 |
申请日期 |
2004.11.09 |
申请人 |
TOKANO KENICHI;YAMASHITA ATSUKO;TAKAHASHI KOICHI;OKUMURA HIDEKI;SATO SHINGO |
发明人 |
TOKANO KENICHI;YAMASHITA ATSUKO;TAKAHASHI KOICHI;OKUMURA HIDEKI;SATO SHINGO |
分类号 |
H01L21/764;H01L21/265;H01L21/336;H01L21/76;H01L29/06;H01L29/76;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/764 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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