发明名称 HIGH PURITY INDIUM
摘要 <p><P>PROBLEM TO BE SOLVED: To collect high purity indium from an indium-containing substance such as the scrap of an ITO target, in a simple process. <P>SOLUTION: This collecting process comprises dissolving the indium-containing substance into hydrochloric acid; controlling the pH of the solution into a predetermined value between 0.5 and 4 by adding alkali, to precipitate and remove predetermined metal ions in the solution in a form of hydroxides; subsequently blowing hydrogen sulfide gas into the solution, to precipitate and remove metal ions harmful for electrolysis to be carried out in the next step in a form of sulfides; and then electrowinning indium metal by using the solution as an electrolytic solution. By the method, indium with purity of 99.999% or higher is collected from the scrap of the ITO target. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005146420(A) 申请公布日期 2005.06.09
申请号 JP20040381412 申请日期 2004.12.28
申请人 DOWA MINING CO LTD 发明人 NAGATA HIDEKI;YANADA NAGAYASU;OGASAWARA SHIGERU;KOMORI ATSUSHI
分类号 C22B7/00;C22B58/00;C25C1/22;(IPC1-7):C22B7/00 主分类号 C22B7/00
代理机构 代理人
主权项
地址